- Chinese researchers have developed super fast flash memory
- The graphene channel enables the writing speed of 400 picos -suppositions and persistent storage
- The “Pox” device is directed to AI bottlenecks with low speed and high speed performance
A research team in China has developed what it states is the non -volatile semiconductor memory device faster to date, with a writing rate of a bit every 400 pepper.
The unfortunately called “smallpox” (phase change oxide) is a flash device of two -dimensional graphene channel developed at the Fudan University in Shanghai.
The equipment built the device using a Dirac Graphene channel combined with a load capture stack. It works faster than access times at system level typically associated with volatile memory types such as SRAM and dram, which generally fall between 1 and 10 nanoseconds. A Picosecond is a thousandth of a nanosecond.
Racing the way for their future applications
Volatile memory such as SRAM and DRAM offers high speed, but loses data when energy is eliminated. Non -volatile flash retains data without energy, but tends to operate in higher latencies, often in dozens of microseconds at NAND level. This makes it less suitable for low latency workloads, such as the inference of AI. The Pox device aims to close that gap combining persistent speed and storage.
The graphene -based device uses a two -dimensional hot bearer injection mechanism. Their structure of the thin body improves horizontal electric fields, improving carrier acceleration and injection efficiency. A 5V, reached 400PS writing speeds and maintained the yield of more than 5.5 million cycles. Long -term retention tests showed data stability for a simulated period of 10 years.
“By using AI algorithms to optimize process proof conditions, we have significantly advanced this innovation and paved the way for their future applications,” said Zhou Peg, principal investigator of the study.
“Our progress in technology is expected not only to remodel the panorama of global storage technology, drive industrial updates and foster new application scenarios, but also provide robust support for China to lead in the relevant fields.”
Liu Chunsen, also involved in the investigation, said the team has created a fully functional chip and now aims to integrate it into existing devices.
“The next step implies integrating it into smartphones and existing computers,” he said.
“In this way, when implementing local models, we will no longer find bottlenecks, such as delays and heating, caused by existing storage technology.”
Through Nature
