- SK Hynix 321-layer NAND addresses AI-driven data storage needs
- 321-layer NAND flash memory improves data transfer speed by 12%
- AI storage demands drive innovation in high-capacity NAND solutions
Samsung and SK Hynix have continued their head-to-head battle in the NAND flash memory market and the latter takes the lead with a new launch.
SK Hynix, the world’s second-largest memory chip maker, recently became the first to mass-produce triple-level cell (TLC) NAND flash memory with more than 300 layers.
The company’s newly announced 321-layer 1 terabit 4D NAND TLC flash memory is set to revolutionize the data storage industry, paving the way for more affordable ultra-high capacity solid state drives (SSDs) that surpass the 100 TB capacity. .
SK Hynix 321-layer NAND
The NAND industry is racing to push the limits of data storage technology and SK Hynix’s achievement is a major milestone.
Following the launch of its 238-layer NAND flash memory last year, SK Hynix’s latest 321-layer NAND flash memory sets a new standard in the industry. The company plans to supply these chips to customers starting in the first half of 2025, targeting the burgeoning artificial intelligence (AI) market, which demands high-performance and energy-efficient storage solutions.
The 321-layer NAND was made possible by SK Hynix’s “Three Plugs” process technology, which involves electrically connecting three plugs through an optimized trace step, significantly improving the speed, power efficiency and overall performance of the devices. chips.
SK Hynix also developed a low-stress material and introduced technology that automatically corrects the alignment between plugs to further optimize the manufacturing process.
The 321-layer product offers a 12% increase in data transfer speed and a 13% improvement in read performance over the previous 238-layer NAND. In addition, it reduces energy consumption by more than 10%. With a 59% increase in productivity, SK Hynix’s new NAND offers an enhanced storage solution for AI data centers and AI applications on devices.
While SK Hynix has achieved this historic feat, its main competitor Samsung is not far behind. Samsung is reportedly working on a 400-layer NAND flash chip, which it plans to bring to market in 2026.
The company’s roadmap includes the development of vertical bonded NAND (BV NAND) technology, which will enable even higher storage density and minimized heat buildup. Samsung’s long-term goal is to introduce NAND chips with more than 1,000 layers by 2030, potentially breaking the 200TB storage barrier for AI-powered SSDs.
“SK Hynix is on the path to moving towards Full Stack Al memory provider by adding a perfect portfolio in the ultra-high performance NAND space in addition to the DRAM business led by HBM,” said Jungdal Choi, director of NAND development at SK Hynix. .
Through KEDGlobal
